中华医学超声杂志

应用化学 ›› 1988, Vol. 0 ›› Issue (4): 58-60.

• 研究简报 • 上一篇    下一篇

电沉积制备p型CuInSe2薄膜

杨军, 谢晓云, 邓薰南   

  1. 上海科技大学化学系
  • 收稿日期:1987-07-06 修回日期:1987-09-05 出版日期:1988-08-10 发布日期:1988-08-10

ELECTRODEPOSITED p-CulnSe2 THIN FILM

Yang Jun, Xie Xiaoyun, Deng Xunnan   

  1. Department of Chemistry, Shanghai University of Science and Technology
  • Received:1987-07-06 Revised:1987-09-05 Published:1988-08-10 Online:1988-08-10

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摘要： CuInSe2化合物半导体的禁带宽度适中,是一种较理想的光电转换材料,有关它的研究已有报导[1-3].本文用电沉积法初步制得ρ-CuInSe2薄膜,并观察到有光电效应.此法设备及工艺简单,具有发展前途.

关键词: p-CuInSe2, 电沉积, 光电化学电池

Abstract: p-CulnSe2 thin film on titaniun or nickel substrate was obtained by electro deposition from a solution of 0.08M InCl3+0.02M CuCl+0.052M SeO2(pH=1.3) with current density of about 6mA/cm2 and under potential of-0.7—0.75V(vs.SCE).The effects of the deposition conditions and the annealing treatment on the film appearance were discussed.The photoelectrochemical currents of the cells based on p-CuInSe2 thin film in a mixture of Na2S, S,and NaOH were measured.

Key words: p-CuInSe2, Electrodeposition, Photoelectrochemical cell

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