中华医学超声杂志

应用化学 ›› 1986, Vol. 0 ›› Issue (3): 56-60.

• 研究论文 • 上一篇    下一篇

外延p-Si中的高-低结对光电化学转换效率的影响

李澄, 王士勋, 李国铮, 徐国宪   

  1. 山东大学化学系
  • 收稿日期:1985-01-05 修回日期:1985-02-26 出版日期:1986-06-10 发布日期:1986-06-10
  • 通讯作者: 李澄
  • 基金资助:
    中国科学院科学基金

THE INFLUENCE OF HIGH-LOW JUNCTION IN EPITAXIAL p-Si ON PHOTOELECTRICAL CONVERSION EFFICIENCY

Li Cheng, Wang Shixun, Li Guozheng, Xu Guoxian   

  1. Department of Chemistry, Shandong University
  • Received:1985-01-05 Revised:1985-02-26 Published:1986-06-10 Online:1986-06-10

PDF

339

摘要： 本文采用p+/p-Si作为光阴极进行了光电化学电池和光助析氢电池的研究,光转换效率分别达到了7.4%(V2+/3+电对)和7.8%(Co—W修饰),并讨论了导致高效率的原因,强调了高-低结对于改善半导体光电极性能的重要性。

Abstract: An epitaxial p-Si(p+/p-Si)containing semiconductive high-low junction was used as photocathode in both photoelectrochemical voltaic and photoassisted hydrogen evolution cells. The conversion efficiencies were 7.4% (V2+/3+ redox couple) and 7.8% (Co-W alloy decorated) respectively. The role of high-low junction in improving conversion efficiency was disscussed.

网站版权 © 应用化学     本网站备案：吉ICP备12000082号