应用化学 ›› 2020, Vol. 37 ›› Issue (4): 367-379.DOI: 10.11944/j.issn.1000-0518.2020.04.190297

• 综合评述 • 上一篇    下一篇

卤化物钙钛矿微纳阵列的可控制备及应用

范黎明ab,王时茂bc,叶雨琪b,丁博文b,单雪燕b,孟钢bc*(),方晓东bc   

  1. a安徽大学物质科学与信息技术研究院 合肥 230601
    b中国科学院安徽光学精密机械研究所,安徽省光子器件与材料重点实验室 合肥 230031
    c中国科学院光伏与节能材料重点实验室 合肥 230031
  • 收稿日期:2019-11-05 接受日期:2020-02-19 出版日期:2020-04-01 发布日期:2020-04-10
  • 通讯作者: 孟钢
  • 基金资助:
    国家自然科学基金项目(11604339,11674324),中国科学院光伏与节能材料重点实验室青年人才课题(PECL2018QN001,PECL2019QN005),核探测与核电子学国家重点实验室开放课题(SKLPDE-KF-201907)资助

Recent Advances in Rational Synthesis and Applications of Halide Perovskite Micro/Nano-Arrays

FAN Limingab,WANG Shimaobc,YE Yuqib,DING Bowenb,SHAN Xueyanb,MENG Gangbc*(),FANG Xiaodongbc   

  1. aInstitutes of Physical Science and Information Technology,Anhui University,Hefei 230601,China
    bAnhui Provincial Key Laboratory of Photonic Devices and Materials,Anhui Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Hefei 230031,China
    cKey Laboratory of Photovoltaic and Energy Conservation Materials, Chinese Academy of Sciences,Hefei 230031,China
  • Received:2019-11-05 Accepted:2020-02-19 Published:2020-04-01 Online:2020-04-10
  • Contact: MENG Gang
  • Supported by:
    the National Natural Science Foundation of China(No.11604339, No.11674324), CAS Key Laboratory of Photovoltaic and Energy Efficient Conservation Materials(Ns.PECL2018QN001, PECL2019QN005), State Key Laboratory of Particle Detection and Electronics (SKLPDE-KF-201907)

摘要:

卤化物钙钛矿不仅具有光吸收系数高、激子束缚能低、载流子迁移率高等优异的光电性能,而且具有缺陷容忍度高、低温溶液法生长、带隙可调等传统半导体不具备的优点,迅速成为光电领域的研究热点之一。 在单个光电器件的基础上,开发阵列型器件将推动卤化物钙钛矿在(柔性)光电器件中的应用。 但卤化物钙钛矿因对常规有机溶剂较敏感而与现有光刻工艺不兼容,开发适合卤化物钙钛矿的微纳制作工艺尤为重要。 本文系统归纳了近年卤化物钙钛矿微纳阵列制备采用的各种策略和方法,分析了不同方法的优缺点和适用性,介绍了卤化物钙钛矿微纳阵列在光电领域的应用,并对该领域目前存在的问题及发展前景进行了展望,以期为新型卤化物钙钛矿光电器件的研究提供参考。

关键词: 卤化物钙钛矿, 微纳阵列, 光电器件, 溶液法

Abstract:

Owing to fascinating properties including high photon absorption coefficient, low exciton binding energy and high carrier mobility, as well as unique merits including excellent defect tolerance, enabling solution growth at low temperature, and feasibility in band gap tailoring, halide perovskites have attracted significant attention and emerged as one of hot topics in the area of optoelectronics. Exploring perovskite micro/nano-arrays on the basis of existing single micro/nano-wire device would undoubtedly promote their applications in the high-performance integrated (flexible) optoelectronics devices. Unfortunately, poor resistance of halide perovskite to general chemical agents (including water) hinders their integration by traditional photolithography process. Therefore, novel lithographic methodologies are highly required. This review briefly outlines the state-of-the-art progress on the synthesis of halide perovskite micro/nano-arrays, analyzes their merits, and depicts the recent progress of micro/nano-arrays in the area of optoelectronic devices. Finally, the challenges in the current stage and the development prospects in future are discussed to provide useful guidance in exploring novel perovskite based integrated devices in future.

Key words: halide perovskite, micro/nano-arrays, optoelectronic devices, solution method