Chinese Journal of Applied Chemistry ›› 1990, Vol. 0 ›› Issue (1): 86-87.

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PHOTOELECTROCHEMICAL BEHAVIOR OF POLYCRY STALLINE Hg0.09Cd0.91Te FILM

Li Jun, Tan Zheng, Mi Tianying   

  1. Changchun Institute of Applied Chemistry, Academia Sinica, Changchun 130022
  • Received:1989-01-23 Revised:1989-07-03 Published:1990-02-10 Online:1990-02-10

Abstract: Cd-rich polycrystalline Hg1-xCdx.Te was electrodeposited on a Ti substrate from anacidic solution(pH=1.0)of mixture of 0.2mol/L CdSO4, 5?10-4mol/L TeO2 and 1.13?10-5 mol/L HgCl2. The film has a cubic structure with preferential orientation in(111).Thevalue of 1-x in Hg1-xCdxTe was determined by EDAX to be 0.09. The photoelectro-chemical cell has a solar energy conversion efficiency of about 0.43% under AM1. 5 illu-mination in a polysulfide redox solution(1.0mol/L Na2S+0.2mol/L S+1.0mol/L NaOH).The bandgap of Hg0.09Cd0.91Te was about 1.26eV.

Key words: Photoelectrochemistry, polycrystalline thin film, mercury cadmium telluride