Chinese Journal of Applied Chemistry

Chinese Journal of Applied Chemistry ›› 1986, Vol. 0 ›› Issue (3): 56-60.

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THE INFLUENCE OF HIGH-LOW JUNCTION IN EPITAXIAL p-Si ON PHOTOELECTRICAL CONVERSION EFFICIENCY

Li Cheng, Wang Shixun, Li Guozheng, Xu Guoxian   

  1. Department of Chemistry, Shandong University
  • Received:1985-01-05 Revised:1985-02-26 Published:1986-06-10 Online:1986-06-10

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Abstract: An epitaxial p-Si(p+/p-Si)containing semiconductive high-low junction was used as photocathode in both photoelectrochemical voltaic and photoassisted hydrogen evolution cells. The conversion efficiencies were 7.4% (V2+/3+ redox couple) and 7.8% (Co-W alloy decorated) respectively. The role of high-low junction in improving conversion efficiency was disscussed.

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