应用化学 ›› 1997, Vol. 0 ›› Issue (2): 20-23.

• 研究论文 • 上一篇    下一篇

p型Si上Ni-Pd薄膜的电化学制备及其表征

张国庆1, 刘冰1, 姚素薇1, 郭鹤桐1, 龚正烈2   

  1. 1. 天津大学应用化学系, 天津 30007;
    2. 天津理工学院, 天津
  • 收稿日期:1996-06-20 修回日期:1996-11-25 出版日期:1997-04-10 发布日期:1997-04-10

Electrochemical Preparation of Ni Pd Film on p-type Silicon and Its Characterization

Zhang Guoqing1, Liu Bing1, Yao Suwei1, Guo Hetong1, Gong Zhenglie2   

  1. 1. Department of Applied Chemistry, Tianjin University, Tianjin 300072;
    2. Tianjin Institute of Technology, Tianjin
  • Received:1996-06-20 Revised:1996-11-25 Published:1997-04-10 Online:1997-04-10

摘要: 采用控电位沉积方式在p型Si上制备了Ni-Pd合金薄膜;考察了合金的阴极沉积和阳极溶出行为;研究了极化方式对膜组成、厚度、结构及形貌的影响。结果表明,在沉积初期,膜主要以层状方式生长,当膜增厚或阴极极化增强时,则以岛状形式生长。X射线衍射测试表明,Ni-Pd合金呈面心立方结构,其晶面间距随合金组成不同而变化。

关键词: 镍钯合金, 电沉积, p型硅

Abstract: Nickel palladium alloy film was prepared on p type silicon using potential controlled electrodeposition. Cathodic deposition and anodic stripping behavior were investigated as well. The influence of polarization style on the composition, thickness, morphology and structure of film was studied by means of energy dispersive X-ray analysis, X-ray diffraction(XRD)and scanning electron microscope(SEM). SEM showed that at the initial stage nickel palladium forms a layered structure, with the film growing and the polarization enhanced, an island growth was found. XRD indicated that nickel palladium alloy has a face-centered cubic structure and the distance between crystal planes changes with the composition of deposit.

Key words: nickel-palladium alloy, electrodeposition, p-type silicon