应用化学 ›› 1987, Vol. 0 ›› Issue (4): 12-15.

• 研究论文 • 上一篇    下一篇

铝箔在盐酸中的交流电侵蚀的研究——Ⅳ.有机酸等弱酸添加剂的作用

阎康平1, 沈行素2   

  1. 1. 成都科技大学化工系;
    2. 中国科学院长春应用化学研究所
  • 收稿日期:1986-02-15 修回日期:1986-05-29 出版日期:1987-08-10 发布日期:1987-08-10

ON A.C.ETCHING OF ALUMINUM FOIL IN HYDROCHLORIC ACID Ⅳ.EFFECT OF ORGANIC ACID ADDITIVES

Yan Kangping1, Shen Xingsu2   

  1. 1. Department of Chemical Engineering, Chengdu University of Science and Technology;
    2. Changchun Institute of Applied Chemistry, Academia Sinica
  • Received:1986-02-15 Revised:1986-05-29 Published:1987-08-10 Online:1987-08-10

摘要: 选用了草酸等9种有机酸作为铝箔在盐酸溶液中交流电侵蚀的添加剂。与添加硫酸同样,再一次表明添加剂为形成高质量致密膜因而获得高表面积扩大率所必需。对应于一定频率存在着最佳添加剂浓度Cm,一级电离常数大的酸,相应的Cm低。用有机酸阴离子在铝表面与Cl-竞争吸附并形成pH缓冲层,从而提高膜的保护性并降低膜的溶解度解释了这些现象。文中讨论了盐酸浓度、电流密度以及Cl-浓度等对侵蚀过程的影响。

Abstract: Nine organic acids including monoacid, diacid and hydroxycarboxylic acid were used as additives in a. c. etching of aluminum foil in hydrochloric acid medium. The results show,as reported in previous paper with additives of sulfuric acid that these additives are essential in formation of a compact etch film, which is broken through during each anodic cycle of the ac-current, thus a high density of etch pits and a large surface area magnification can be obtained. For a certain a. c. frequency there exists an optimum additive concentration Cm,the greater the first dissociation constant of the acid, the lower the Cm. Cm also decreases with increase of a. c. frequency. It is proposed, that the organic acid anion was competitively adsorbed with (Cl-) ion, forming a buffer layer, which decreases the solubility of etch film. The effects of the concentration of hydrochloric acid, the current density of a. c. and the overall concentration of Cl- ion on etching process were also discussed.