应用化学 ›› 1986, Vol. 0 ›› Issue (2): 48-52.

• 研究论文 • 上一篇    下一篇

Cr的沉积速度对Cr-MIS太阳电池性能的影响

李文范, 刘秀英   

  1. 中国科学院长春应用化学研究所
  • 收稿日期:1985-02-02 修回日期:1985-06-12 出版日期:1986-04-10 发布日期:1986-04-10

THE EFFECT OF CHROMIUM DEPOSITION RATE ON THE BEHAVIOUR OF Cr-MIS SOLAR CELL

Li Wenfan, Liu Xiuying   

  1. Changchun Institute of Applied Chemistry, Academia Sinica
  • Received:1985-02-02 Revised:1985-06-12 Published:1986-04-10 Online:1986-04-10

摘要: 实验证明快速沉积Cr的功函数比缓慢沉积Cr的功函数低,平均值为3.99eV,这样低的功函数可以控制开路电压在0.51—0.56V,用快速沉积方法可降低Cr的方块电阻,因此省去为了降低Cr的方块电阻的Cu层,以及为了防止Cu层氧化的Cr层,简化了工艺。快速沉积Cr的制备的无Cu层Cr-MIS太阳电池在AM1.5(100mW/cm2)下转换效率达到12%(按有效面积计)。

Abstract: It was shown in this paper that the work function of the rapidly deposited Cr layer was smaller than that of slowly deposited one with the average value of 3.99eV and an increased value of Voc up to 0.51—0.56V.The sheet resistance of Cr can then be decreased.Therefore,the Cu layer as well as the outer layer of Cr usually deposited for decreasing the sheet resistance of Cr and for preventing Cu from oxidation,respectively, can be sa-ved.The conversion effecioncy of Cr-MIS solar cell is of 12%,based on the active area of 1.3cm2 at AM1.5 (100mW/cm2).