先进光刻技术:导向自组装

doi:10.19894/j.issn.1000-0518.210278

摘要/Abstract

摘要： 导向自组装(Directed Self-Assembly,DSA)光刻技术是一种极具发展潜力的新型图形化工艺,已被国际器件与系统路线图(International Roadmap for Devices and Systems,IRDS)列为下一代光刻技术的主要候选方案。 DSA光刻技术是基于嵌段共聚物(Block Copolymer,BCP)自组装构建高分辨图案,能够突破传统光学光刻的衍射极限,具有高通量、低成本和延续性好等显著优势,已成为半导体工艺技术中的研发热点。将DSA与其它光刻技术如极紫外(Extreme Ultraviolet,EUV)光刻、深紫外(Deep Ultraviolet,DUV)光刻、紫外光刻和纳米压印光刻(Nanoimprint Lithography,NIL)等相结合,能极大地提高加工结构的分辨率以及器件的密度。目前,DSA光刻技术已被应用于鳍式场效应晶体管(Fin Field-Effect Transistor,FinFET)、存储器和光电子器件等领域,以期实现高密度集成和高效率低成本制造。本文对DSA光刻技术的原理、材料、工艺、应用以及在工业化进程中所面临的机遇和挑战进行全面的综述。

关键词: 导向自组装, 先进光刻技术, 嵌段共聚物

Abstract: Directed self-assembly (DSA) emerges as one of the most promising novel patterning techniques and has been listed as a candidate for the next generation of lithography by the international roadmap for devices and systems (IRDS). DSA is capable of breaking through the diffraction limit of conventional photolithography, producing high-resolution patterning. Due to the significant advantages such as high throughput and low cost, DSA has become a research hotspot in the semiconductor industry. Combined with other lithographies such as extreme ultraviolet (EUV) lithography, deep ultraviolet (DUV) lithography, ultraviolet lithography, and nanoimprint lithography (NIL), DSA can improve the resolution of the patterning as well as the density of the device. DSA has been employed to fabricate a series of nanoscale devices such as fin field-effect transistor (FinFET), bit patterned media (BPM), and memory, offering varied configurations for high-density integration and cost-efficient manufacturing. This review systematically illustrates the principle, materials, processing, and application of DSA, and further discovers the opportunities and challenges as well in the process of industrialization.

Key words: Directed self-assembly, Advanced lithography, Block copolymer

中图分类号:

O649

胡晓华, 熊诗圣. 先进光刻技术:导向自组装[J]. 应用化学, 2021, 38(9): 1029-1078.

HU Xiao-Hua, XIONG Shi-Sheng. Advanced Lithography: Directed Self-Assembly[J]. Chinese Journal of Applied Chemistry, 2021, 38(9): 1029-1078.

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